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trenchfet power mosfets: 1.8-v rated esd protected: 2000 v thermally enhanced sc-70 package

load switching pa switch level switch SI1563EDH vishay siliconix new product document number: 71416 s-03943?rev. b, 21-may-01 www.vishay.com 1 complementary 20-v (d-s) low-threshold mosfet v ds (v) r ds(on) ( ) i d (a) 0.280 @ v gs = 4.5 v 1.28 n-channel 20 0.360 @ v gs = 2.5 v 1.13 0.450 @ v gs = 1.8 v 1.00 0.490 @ v gs = ?4.5 v ?1.00 p-channel ?20 0.750 @ v gs = ?2.5 v ?0.81 1.10 @ v gs = ?1.8 v ?0.67 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 marking code ea xx lot traceability and date code part # code yy p-channel d 1 s 1 g 1 1 k n-channel 3 k d 2 s 2 g 2

n-channel p-channel parameter symbol 5 secs steady state 5 secs steady state unit drain-source voltage v ds 20 ?20 gate-source voltage v gs 12 12 v t a = 25 c 1.28 1.13 ?1.00 ?0.88 continuous drain current (t j = 150 c) a t a = 85 c i d 0.92 0.81 ?0.72 ?0.63 pulsed drain current i dm 4.0 ?3.0 a continuous source current (diode conduction) a i s 0.61 0.48 ?0.61 ?0.48 t a = 25 c 0.74 0.57 0.30 0.57 maximum power dissipation a t a = 85 c p d 0.38 0.30 0.16 0.3 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 5 sec 130 170 maximum junction-to-ambient a steady state r thja 170 220 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI1563EDH vishay siliconix new product www.vishay.com 2 document number: 71416 s-03943 ? rev. b, 21-may-01

parameter symbol test condition min typ max unit static v ds = v gs , i d = 100 a n-ch 0.45 gate threshold voltage v gs(th) v ds = v gs , i d = ? 100 a p-ch ? 0.45 v n-ch 1 v ds = 0 v, v gs = 4.5 v p-ch 1 a gate-body leakage i gss n-ch 10 v ds = 0 v, v gs = 12 v p-ch 10 ma v ds = 16 v, v gs = 0 v n-ch 1 v ds = ? 16 v, v gs = 0 v p-ch ? 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c n-ch 5 a v ds = ? 16 v, v gs = 0 v, t j = 85 c p-ch ? 5 v ds 5 v, v gs = 4.5 v n-ch 2 on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v p-ch ? 2 a v gs = 4.5 v, i d = 1.13 a n-ch 0.220 0.280 v gs = ? 4.5 v, i d = ? 0.88 a p-ch 0.400 0.490 v gs = 2.5 v, i d = 0.99 a n-ch 0.281 0.360 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 0.71 a p-ch 0.610 0.750 v gs = 1.8 v, i d = 0.20 a n-ch 0.344 0.450 v gs = ? 1.8 v, i d = ? 0.20 a p-ch 0.850 1.10 v ds = 10 v, i d = 1.13 a n-ch 2.6 forward transconductance a g fs v ds = ? 10 v, i d = ? 0.88 a p-ch 1.5 s i s = 0.48 a, v gs = 0 v n-ch 0.8 1.2 diode forward voltage a v sd i s = ? 0.48 a, v gs = 0 v p-ch ? 0.8 ? 1.2 v dynamic b n-ch 0.65 1.0 total gate charge q g n-channel p-ch 1.2 1.8 n-channel v ds = 10 v, v gs = 4.5 v, i d = 1.13 a n-ch 0.2 gate-source charge q gs p-channel p-ch 0.3 nc v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 0.88 a n-ch 0.23 gate-drain charge q gd p-ch 0.3 n-ch 45 70 turn-on delay time t d(on) p-ch 150 230 n-channel n-ch 85 130 rise time t r v dd = 10 v, r l = 20 i d 0.5 a, v gen = 4.5 v, r g = 6 p-ch 480 720 p-channel n-ch 350 530 ns turn-off delay time t d(off) p-channel v dd = ? 10 v, r l = 20 i ? 0.5 a, v = ? 4.5 v, r = 6 p-ch 840 1200 i d ? 0.5 a, v gen = ? 4.5 v, r g = 6 n-ch 210 320 fall time t f p-ch 850 1200 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI1563EDH vishay siliconix new product document number: 71416 s-03943 ? rev. b, 21-may-01 www.vishay.com 3

0.001 100 10,000 gate current vs. gate-source voltage 0 2 4 6 8 10 0 4 8 12 16 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 0 3 9 12 15 t j = 25 c t j = 150 c ? gate current (ma) i gss 0.01 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 01234 0 20 40 60 80 100 120 140 048121620 v gs = 5 thru 2 v 25 c t c = ? 55 c c rss c oss c iss v gs = 4.5 v v gs = 2.5 v 125 c 1.5 v output characteristics transfer characteristics on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d v ds ? drain-to-source voltage (v) c ? capacitance (pf) ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance v gs = 1.8 v 1 v 6
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0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 v ds = 10 v i d = 1.28 a v gs = 4.5 v i d = 1.13 a gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 100 a 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 0.1 1 2 i d = 1.13 a 0 0.2 0.6 0.8 threshold voltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0 1 5 power (w) single pulse power, junction-to-ambient time (sec) 3 4 1 600 10 0.1 0.01 t j = 25 c 2 t j = 150 c 0.4 100
SI1563EDH vishay siliconix new product document number: 71416 s-03943 ? rev. b, 21-may-01 www.vishay.com 5

10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance

0.001 100 10,000 gate current vs. gate-source voltage 0 2 4 6 8 0 4 8 12 16 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 0 3 9 12 15 t j = 25 c t j = 150 c ? gate current (ma) i gss 0.01 6
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0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.4 0.8 1.2 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 40 80 120 160 048121620 v gs = 5 thru 3 .5v 25 c t c = ? 55 c c rss c oss c iss v ds = 10 v i d = 1 a v gs = 4.5 v i d = 0.88 a v gs = 4.5 v v gs = 2.5 v 125 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 1.8 v 2 v 2.5 v 1 v 3 v
SI1563EDH vishay siliconix new product document number: 71416 s-03943 ? rev. b, 21-may-01 www.vishay.com 7

? 0.15 ? 0.10 ? 0.05 ? 0.00 0.05 0.10 0.15 0.20 0.25 0.30 ? 50 ? 25 0 25 50 75 100 125 150 i d = 100 a 1.0 1.2 0.0 0.4 0.8 1.2 1.6 012345 0.1 1 2 i d = 0.88 a 0 0.2 0.6 0.8 threshold voltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0 1 5 power (w) single pulse power, junction-to-ambient time (sec) 3 4 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 600 10 0.1 0.01 t j = 25 c 2 t j = 150 c 0.4 100
SI1563EDH vishay siliconix new product www.vishay.com 8 document number: 71416 s-03943 ? rev. b, 21-may-01

10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance

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